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Magazine Name : Ieee Transactions On Electron Devices

Year : 2005 Volume number : 52 Issue: 02

Characteristics Of In Al 1-X N--Gan High-Electron Mobility Field-Effect Transistor (Article)
Subject: Gan , High-Electron Mobility Transistor (Hemt)
Author: Oded Katz     
page:      146 - 150
N - Inas-Inaias Recess Gate Technology For Inas-Channel Millimeter-Wave Hfets (Article)
Subject: Antimonides
Author: C Kadow     
page:      151 - 158
Influence Of Surface Defect Charge At Algan- Gan-Hemt Upon Schottky Gate Leakage Current And Breakdown Voltage (Article)
Subject: Gan
Author: Waturu Saito     
page:      159 - 164
Measurements Of Unity Cutoff Frequency And Saturation Velocity Of A Gan Hemt Transistor (Article)
Subject: Cutoff Frequency
Author: C H Oxley     
page:      165 - 169
Modeling The Electrical Characteristics Of Schottky Contacts In Low-Dimensional Heterostructure Devices (Article)
Subject: Quantum-Effect Semiconductor Devices
Author: Regiane Ragi     
page:      170 - 175
Cellular Nonlinear Network Based On Semiconductor Tunneling Nanostructure (Article)
Subject: Cellular Nonlinear Networks (Cnns)
Author: Alexander Khitun     
page:      183 - 189
Reduction Of Power Consumption In Compact Dfd Disply By Using Fs Color Technology (Article)
Subject: Field-Sequential Color
Author: Munekazu Date     
page:      190 - 193
High Brightness Zns And Gan Electroluminescent Devices Using Pzt Thick Dielectric Layers (Article)
Subject: Electrical Characteristics
Author: Chanaka Munasinghe     
page:      194 - 203
Charactterization And Modling Of Three-Terminal Heterojunction Phototransistors Using An In Gap Layer For Passivation (Article)
Subject: Heterojunction Phototransistor (Hpt)
Author: Shih-Wei Tan     
page:      204 - 210
Influence Of Dielectric Breakdown On Mosfet Drain Current (Article)
Subject: Breakdown
Author: Giorgio Cellere     
page:      211 - 217
The Design, Analysis, And Development Of Highly Manufacturable 6-T Sram Bitcells For Soc Applications (Article)
Subject: Application Specific Integrated Circuit (Asic)
Author: Ramnath Venkatraman     
page:      218 - 226
Device Optimization For Digital Subthreshold Logic Operation (Article)
Subject: Device Optimization
Author: Bipul C Paul     
page:      237 - 247
On The Operation Configuration Of Sige Hibts Based On Power Gain Analysis (Article)
Subject: Common-Base
Author: Zhenq Iang Ma     
page:      248 - 255
Modeling And Optimization Of Fringe Capacitance Of Nanoscale Dgmos Devices (Article)
Subject: Conformal Mapping
Author: Aditya Bansal     
page:      256 - 262
On The Threshold Voltage Of Strained-Si-Si 1-X Gex Mosfets (Article)
Subject: Effective Density Of States
Author: Weimin Zhang     
page:      263 - 268
Weave Patterned Organic Transistors On Fiber For E-Textiles (Article)
Subject: E-Textiles
Author: Josephine B Lee     
page:      269 - 275
Experimental Behavior Of Single-Chip Igbt And Coolmos Devices Under Repetive Short-Circuit Conditions (Article)
Subject: Coolmos
Author: Stephane Lefebvre     
page:      276 - 283
Narrow-Width Soi Devices: The Role Of Quantum-Mechanical Size Quantization Effect And Unintentional Doping On The Device Operation (Article)
Subject: Quantum Effects
Author: Dragica Vasileska     
page:      277 - 236
Polar Heterostructure For Multifunction Devices: Theoretical Studies (Article)
Subject: Device Simulations
Author: Yuh-Renn Wu     
page:      284 - 293