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Magazine Name : Ieee Transactions On Electron Devices
Year : 2005Volume number : 52Issue:02
Characteristics Of In Al 1-X N--Gan High-Electron Mobility Field-Effect Transistor(Article) Subject:
Gan
,
High-Electron Mobility Transistor (Hemt)
Author:
Oded
Katz
page:
146
-
150
N - Inas-Inaias Recess Gate Technology For Inas-Channel Millimeter-Wave Hfets(Article) Subject:
Antimonides
Author:
C
Kadow
page:
151
-
158
Influence Of Surface Defect Charge At Algan- Gan-Hemt Upon Schottky Gate Leakage Current And Breakdown Voltage(Article) Subject:
Gan
Author:
Waturu
Saito
page:
159
-
164
Measurements Of Unity Cutoff Frequency And Saturation Velocity Of A Gan Hemt Transistor(Article) Subject:
Cutoff Frequency
Author:
C H
Oxley
page:
165
-
169
Modeling The Electrical Characteristics Of Schottky Contacts In Low-Dimensional Heterostructure Devices(Article) Subject:
Quantum-Effect Semiconductor Devices
Author:
Regiane
Ragi
page:
170
-
175
Cellular Nonlinear Network Based On Semiconductor Tunneling Nanostructure(Article) Subject:
Cellular Nonlinear Networks (Cnns)
Author:
Alexander
Khitun
page:
183
-
189
Reduction Of Power Consumption In Compact Dfd Disply By Using Fs Color Technology(Article) Subject:
Field-Sequential Color
Author:
Munekazu
Date
page:
190
-
193
High Brightness Zns And Gan Electroluminescent Devices Using Pzt Thick Dielectric Layers(Article) Subject:
Electrical Characteristics
Author:
Chanaka
Munasinghe
page:
194
-
203
Charactterization And Modling Of Three-Terminal Heterojunction Phototransistors Using An In Gap Layer For Passivation(Article) Subject:
Heterojunction Phototransistor (Hpt)
Author:
Shih-Wei
Tan
page:
204
-
210
Influence Of Dielectric Breakdown On Mosfet Drain Current(Article) Subject:
Breakdown
Author:
Giorgio
Cellere
page:
211
-
217
The Design, Analysis, And Development Of Highly Manufacturable 6-T Sram Bitcells For Soc Applications(Article) Subject:
Application Specific Integrated Circuit (Asic)
Author:
Ramnath
Venkatraman
page:
218
-
226
Device Optimization For Digital Subthreshold Logic Operation(Article) Subject:
Device Optimization
Author:
Bipul C
Paul
page:
237
-
247
On The Operation Configuration Of Sige Hibts Based On Power Gain Analysis(Article) Subject:
Common-Base
Author:
Zhenq Iang
Ma
page:
248
-
255
Modeling And Optimization Of Fringe Capacitance Of Nanoscale Dgmos Devices(Article) Subject:
Conformal Mapping
Author:
Aditya
Bansal
page:
256
-
262
On The Threshold Voltage Of Strained-Si-Si 1-X Gex Mosfets(Article) Subject:
Effective Density Of States
Author:
Weimin
Zhang
page:
263
-
268
Weave Patterned Organic Transistors On Fiber For E-Textiles(Article) Subject:
E-Textiles
Author:
Josephine B
Lee
page:
269
-
275
Experimental Behavior Of Single-Chip Igbt And Coolmos Devices Under Repetive Short-Circuit Conditions(Article) Subject:
Coolmos
Author:
Stephane
Lefebvre
page:
276
-
283
Narrow-Width Soi Devices: The Role Of Quantum-Mechanical Size Quantization Effect And Unintentional Doping On The Device Operation(Article) Subject:
Quantum Effects
Author:
Dragica
Vasileska
page:
277
-
236
Polar Heterostructure For Multifunction Devices: Theoretical Studies(Article) Subject:
Device Simulations
Author:
Yuh-Renn
Wu
page:
284
-
293